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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2515DX DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 9 20 5 7.5 45 150 -55~150 UNIT V V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT /W Rth j-c isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2515DX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0; TC=125 VEB= 6V ; IC= 0 130 1.0 1.0 2.0 V ICES Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 13 hFE-2 DC Current Gain IC= 4.5A; VCE= 5V 5 10.2 VECF C-E Diode Forward Voltage IF= 4.5A 2.2 V isc Websitewww.iscsemi.cn 2 |
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